ATP207 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

ATP207

N-Channel Power MOSFET

ON Semiconductor 

Ordering number : ENA1319A

ATP207

N-Channel Power MOSFET

40V, 65A, 9.1mΩ, Single ATPAK

http://onsemi.com

Features

• Low ON-resistance

• 4.5V drive

• Halogen free compliance

• Large current

• Slim package

• Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note :*1 VDD=10V, L=50μH, IAV=33A

*2 L≤50μH, Single pulse

Symbol

VDSS

VGSS

ID

IDP

PD

Tch

Tstg

EAS

IAV

Conditions

PW≤10μs, duty cycle≤1%

Tc=25°C

Ratings

Unit

40

V

±20

V

65

A

195

A

50

W

150

°C

--55 to +150

°C

35 mJ

33

A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7057-001

6.5

4

1.5

0.4

ATP207-TL-H

4.6

2.6

0.4

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

TL

Marking

ATP207

LOT No.

2

1

3

0.8

0.6

2.3 2.3

0.55

0.4

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

Electrical Connection

2,4

1

3

Semiconductor Components Industries, LLC, 2013

July, 2013

61312 TKIM/91708PA TIIM TC-00001572 No. A1319-1/7

Share Link: