Mrf342
NPN EPITAXIAL PLANAR TYPE RF POWER TRANSISTOR
Description : the MRF342 IS a silicon
NPN epitaxial planar transistor designed
for RF power amplifiers on VHF band
mobile radio applications .
The AMERICAN MICROSEMICONDUCTOR
MRF342 is designed for VHF amplifier applications
operating to 150 Mhz
MAXIMUM RATINGS
IC
VCEO
3.0 A
35 V
VCBO
65 V
VEBO
4.0 V
PDISS
55 W @ TC = 25 °C
TJ
-55 °C to +150 °C
TSTG
-55 °C to +150 °C
θJC
3.2 °C/W
PACKAGE STYLE TO-220AB
1 = Base 2 = Emitter 3 = Collector
4 = Emitter
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO IC = 20 mA
BVCES IC = 20 mA
BVCBO IC = 20 mA
BVEBO IE = 2.0 mA
ICES
VCE = 27 V
hFE
VCE = 5.0 V
IC = 1.0 A
COB
VCB = 27 V
f = 1.0
GPE
MVCHCz= 13.5 V POUT = 6.0 W f = 136
GPE
MHz
VCC = 27 V
POUT = 24 W f = 136
ηC
MHz
MINIMUM TYPICAL MAXIMU
35
M
65
65
4.0
2.0
10
100
20
30
10
11.5
11
12.3
50
60
UNITS
V
V
V
V
mA
---
pF
dB
dB
%
Tel. 1-‐973-‐377-‐9566, Fax. 1-‐973-‐377-‐3078
133 Kings Road,
Madison, New Jersey 07940
United States of America
© 2014 American Microsemiconductor, Inc.
Specifications are subject to change without notice.
www.americanmicrosemi.com
Document Page 1 of 1
3Revised 01/2014
Aerospace Mgmt. Sys. Cert.
AS/EN/JISQ9100:2009 Rev. C
ISO9001:2008
Cert No. 45325