IRFF9230 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRFF9230 Datasheet PDF : 2 Pages
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, (Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRFF9230, IRFF9231, IRFF9232, IRFF9233
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
Avalanche-Energy-Rated
P-Channel Power MOSFETs
-3.5 A and -4.0 A, -150 V and -200 V
ros(on) = 0.8 fi and 1.2 O
Feature*:
• Single pulse avalanche energy rated
• SOA is power-dissipation limited
• Nanosecondswitching speeds
• Linear transfer characteristics
• High input impedance
The IRFF9230, IRFF9231, IRFF9232 and IRFF9233 are
advanced power MOSFETs designed, tested, and guaran-
teed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are p-
channel enhancement-mode silicon gate power field-effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay
drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
The IRFF-types are supplied in the JEDEC TO-205AF (Low-
Profile TO-39) metal package.
TERMINAL DIAGRAM
P-CHANNEL ENHANCEMENT MODE
TERMINAL DESIGNATION
SOURCE
JEDEC TO-205AF
ABSOLUTE-MAXIMUM RATINGS
CHARACTERISTIC
Drain-Source Voltage 0
Drain-Gate Voltage (Ro. = 20 kO) 0
Continuous Drain Current
Pulsed Drain Current 0
Gate-Source Voltage
Maximum Power Dissipation
Linear Derating Factor
Single-Pulse Avalanche Energy Rating 0
Operating Junction and Storage Temperature
Range
Lead Temperature
Vos
VMB
ID @ Tc = 25° C
IDM
Vga
PD @ Tc = 25° C
£„
__
Tj, Twg
IRFF9230
-200
-200
-4.0
-16
IRFF9231 IRFF9232
-150
-200
-150
-200
-4.0
-3.5
-16
-14
±20
25 (See Fig. 14)
0.2 (See Fig. 14)
500
IRFF9233
-150
-150
-3.5
-14
-55 to +150
300 (0,063 in. (1.6mm) from case lor 10s)
UNITS
V
V-
A
A
V
W
W/"C
mj
•c
«c
Quality Semi-Conductors
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