BFX38 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BFX38 Datasheet PDF : 3 Pages
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BFX38
BFX39
BFX40
BFX41
fT
CEBO
CCBO
ton
ts
tf
Parameter
Transitions Frequency
Emitter - Base Capacitance
Collector - Base Capacitance
Turn-on time
Storage Time
Fall Time
Test Conditions
lc = -50mA
VCE=-10V
f=100MHz
lc = 0
VEB = -0.5V
f=1MHz
|E = O
vCB = -o.5V
f=1MHz
lc = - 500mA Vcc = -30V
IB1 = -50mA
lc = - 500mA
Vcc = - 30V
IB1 = IB2 = -50mA
lc = - 500mA
Vcc = - 30V
IB1 = - IB2 = -50mA
Pulsed: pulse duration = 300u.s, duty cycle = 1%
Min. Typ. Max. Unit
100
150
MHz
75
120
PF
15
20
33
100
160
350 ns
27
50
THERMAL CHARACTERISTICS
Rethfl-case) Thermal Resistance Junction to case
^ethG-amb) Thermal Resistance Junction to ambient
44 °C/W
219 °C/W
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