RF2128 데이터 시트보기 (PDF) - RF Micro Devices

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RF2128

MEDIUM POWER LINEAR AMPLIFIER

RF Micro Devices 

RF2128

Pin Function Description

Interface Schematic

1

VCC2

Power supply for the driver stage and interstage matching. External

matching on this pin is required to optimize the gain. The matching on

this port also greatly affects the input impedance. A decoupling capaci-

tor of 330pF is required, together with a series RC for tuning for maxi-

mum gain at the desired frequency. See the application information for

details.

2

GND1

Ground connection for the driver stage. Keep traces physically short

and connect immediately to the ground plane for best performance.

2

3

PD

Power Down control. When this pin is "low", all circuits are shut off. A

"low" is typical 1.2V or less at room temperature. When this pin is

"high", all circuits are operating normally. A "high" is VCC. If PD is below

VCC, output power and performance will be degraded. This could be

used to obtain some gain control, but results are not guaranteed.

4

RF IN

RF Input. This is a 50Ω input, but the actual impedance depends on the

matching provided on pin 1. An external DC blocking capacitor is

required if this port is connected to a DC path to ground.

5

GND2

Ground connection for the output stage. Keep traces physically short

and connect immediately to the ground plane for best performance.

6

RF OUT RF Output and power supply for the output stage. Bias for the output

stage needs to be provided on this pin. This can be done through a

quarter-wave microstrip that is RF grounded on the other end. For

matching to 50Ω, an external series microstrip line is required.

7

RF OUT Same as pin 6.

8

VCC1

Power supply for the bias circuits. An external RF bypass capacitor of

22pF is required. Keep the traces to the capacitor as short as possible,

and connect the capacitor immediately to the ground plane.

Pkg

Base

GND

Ground connection. The backside of the package should be connected

to the ground plane through a short path, i.e., vias under the device

may be required.

Application Schematic

2450 MHz

VCC

VPD

POWER

DOWN

RF IN

1 nF

1.5 Ω 2.4 pF

330 pF

L= 250 mil,

W= 20 mil

1

6.2 pF

2

33 pF

3

4

L= 175 mil,

W= 10mil

BIAS

CIRCUITS

PACKAGE BASE

22 pF

22 pF

L = quarter wave,

W= 10mil

8

15 pF

RF OUT

7

L = 220 mil,

W = 25 mil

6

PCB materials: FR-4

5

Thickness: 0.031"

Rev A3 010112

2-87

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