DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

EL5120 데이터 시트보기 (PDF) - Renesas Electronics

부품명
상세내역
제조사
EL5120
Renesas
Renesas Electronics Renesas
EL5120 Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
EL5120, EL5220, EL5420
Electrical Specifications VS+ = +15V, VS- = 0V, RL = 10kand CL = 10pF to 7.5V, TA = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN TYP MAX
INPUT CHARACTERISTICS
VOS
TCVOS
IB
RIN
CIN
CMIR
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
VCM = 7.5V
(Note 11)
VCM = 7.5V
2
14
5
2
50
1
1.35
-0.5
+15.5
CMRR
Common-Mode Rejection Ratio
AVOL
Open Loop Gain
OUTPUT CHARACTERISTICS
for VIN from -0.5V to +15.5V
0.5V VOUT 14.5V
53
72
75
95
VOL
Output Swing Low
VOH
Output Swing High
ISC
Short Circuit Current
IOUT
Output Current
POWER SUPPLY PERFORMANCE
IL = -5mA
IL = +5mA
80
150
14.85 14.92
±120
±30
PSRR
Power Supply Rejection Ratio
IS
Supply Current (Per Amplifier)
DYNAMIC PERFORMANCE
VS is moved from 4.5V to 15.5V
No load
60
80
500
750
SR
Slew Rate (Note 12)
1V VOUT 14V, 20% to 80%
10
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
500
BW
-3dB Bandwidth
RL = 10k, CL = 10pF
12
GBWP
Gain-Bandwidth Product
RL = 10k, CL = 10pF
8
PM
Phase Margin
RL = 10k, CL = 10pF
50
CS
Channel Separation
f = 5MHz (EL5220 and EL5420 only)
75
NOTES:
11. Measured over operating temperature range
12. Slew rate is measured on rising and falling edges
UNIT
mV
µV/°C
nA
G
pF
V
dB
dB
mV
V
mA
mA
dB
µA
V/µs
ns
MHz
MHz
°
dB
FN7186 Rev 8.00
October 15, 2015
Page 6 of 21

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]