VN2406 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
VN2406 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
VN2406
VN2410
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS/
BVDGs
240V
240V
RDS<ON)
(max)
6.0Q
10Q
Features
L) Free from secondary breakdown
LI Low power drive requirement
Q Ease of paralleling
LI Low C|SS and fast switching speeds
Q Excellent thermal stability
LI Integral Source-Drain diode
LI High input impedance and high gain
Q Complementary N- and P-channel devices
'D(ON)
(min)
1.0A
1.0A
Order Number / Package
TO-92
VN2406L
VN2410L
Applications
LI Motor controls
Q Converters
Q Amplifiers
Q Switches
U Power supply circuits
U Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
' Distance of 1.6 mm from case for 10 seconds.
BV,DSS
BV,DCS
±20V
-55°Cto+150°C
300°C
Quality Semi-Conductors
SGD
TO-92
Note: See Package Outline section for dimensions.
Share Link: 