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ST2304SRG 데이터 시트보기 (PDF) - STANSON TECHNOLOGY
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ST2304SRG
N Channel Enhancement Mode MOSFET
STANSON TECHNOLOGY
ST2304SRG Datasheet PDF : 6 Pages
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ST2304SRG
N Channel Enhancement Mode MOSFET
3.2A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
=0V,I
D
=250uA 30
V
V
DS
=VGS,I
D
=250uA 1.0
3.0 V
V
DS
=0V,V
GS
=
±
20V
±
100 nA
V
DS
=30V,V
GS
=1.0V
1
V
DS
=30V,V
GS
=0V
T
J
=55
℃
10
uA
V
DS
≧
4.5V,V
GS
=10V 6
V
DS
≧
4.5V,V
GS
=4.5V
4
A
V
GS
=10V,I
D
=3.2A
V
GS
=4.5V,I
D
=2.0A
V
GS
=2.5V,I
D
=1.5A
0.044 0.052
0.060 0.067
Ω
0.090
0.100
V
DS
=4.5V,I
D
=2.5V
4.6
S
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
V
SD
I
S
=1.25A,V
GS
=0V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
V
DS
=15V
V
GS
=10V
I
D
≡
2.5A
V
DS
=15V
V
GS
=0V
F=1MH
z
V
DD
=15V
R
L
=15
Ω
I
D
=1.0A
V
GEN
=10V
R
G
=6
Ω
1.2 V
4.5 10
0.8
nC
1.0
240
110
pF
17
8.0 20
12 30
nS
17 35
8.0 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2304SRG 2005. V1
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