IRF7105TRPBF-1 데이터 시트보기 (PDF) - International Rectifier
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IRF7105TRPBF-1 Datasheet PDF : 10 Pages
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N-CH P-CH
VDS
25 -25 V
RDS(on) max
0.1
(@VGS = 10V)
0.25 Ω
Qg (typical)
9.4
10 nC
ID
3.5 -2.3 A
(@TA = 25°C)
IRF7105TRPbF-1
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
Top View
SO-8
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7105PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7105TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
14
-10
2.0
0.016
± 20
3.0
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Min.
Typ.
Max.
62.5
Units
°C/W
1
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October 16, 2014
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