MUBW15-06A7 데이터 시트보기 (PDF) - IXYS CORPORATION

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MUBW15-06A7

Converter - Brake - Inverter Module (CBI2)

IXYS CORPORATION 

MUBW 15-06 A7

Output Inverter T1 - T6

Symbol

VCES

VGES

VGEM

IC25

IC80

RBSOA

tSC

(SCSOA)

Ptot

Conditions

Maximum Ratings

TVJ = 25°C to 150°C

Continuous

Transient

600

V

± 20

V

± 30

V

TC = 25°C

TC = 80°C

25

A

18

A

VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

Clamped inductive load; L = 100 µH

ICM = 30

A

VCEK ≤ VCES

VCE = VCES; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

non-repetitive

10

µs

TC = 25°C

100

W

Symbol

VCE(sat)

VGE(th)

I

CES

IGES

td(on)

tr

td(off)

tf

Eon

E

off

Cies

QGon

RthJC

Conditions

Characteristic Values

(T

VJ

=

25°C,

unless

otherwise

specified)

min. typ. max.

IC = 15 A; VGE = 15 V; TVJ = 25°C

TVJ = 125°C

IC = 0.4 mA; VGE = VCE

V

CE

=

V;

CES

V

GE

=

0

V;

TVJ

=

25°C

TVJ = 125°C

VCE = 0 V; VGE = ± 20 V

Inductive load, TVJ = 125°C

VCE = 300 V; IC = 15 A

VGE = ±15 V; RG = 68 Ω

1.9 2.3 V

2.2

V

4.5

6.5 V

0.6 mA

0.4

mA

200 nA

30

ns

45

ns

270

ns

40

ns

0.7

mJ

0.5

mJ

VCE = 25 V; VGE = 0 V; f = 1 MHz

VCE= 300V; VGE = 15 V; IC = 15 A

(per IGBT)

800

pF

57

nC

1.3 K/W

Output Inverter D1 - D6

Symbol

IF25

IF80

Conditions

TC = 25°C

TC = 80°C

Maximum Ratings

35

A

24

A

Symbol

V

F

IRM

t

rr

RthJC

Conditions

I

F

=

15

A;

V

GE

=

0

V;

TVJ

=

25°C

TVJ = 125°C

IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C

V = 300 V; V = 0 V

R

GE

(per diode)

Characteristic Values

min. typ. max.

2.0 V

1.3

V

13

A

90

ns

2.1 K/W

Equivalent Circuits for Simulation

Conduction

D11 - D16

Rectifier Diode (typ. at TJ = 125°C)

V0 = 1.18 V; R0 = 15 mΩ

T1 - T6 / D1 - D6

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 0.99 V; R0 = 81 mΩ

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.09V; R0 = 12 mΩ

T7 / D7

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 0.89 V; R0 = 122 mΩ

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.07 V; R0 = 23 mΩ

Thermal Response

D11 - D16

Rectifier Diode (typ.)

Cth1 = 0.093 J/K; Rth1 = 1.212 K/W

Cth2 = 0.778 J/K; Rth2 = 0.258 K/W

T1 - T6 / D1 - D6

IGBT (typ.)

Cth1 = 0.077 J/K; Rth1 = 1.111 K/W

Cth2 = 0.732 J/K; Rth2 = 0.279 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.065 J/K; Rth1 = 1.766 K/W

Cth2 = 0.636 J/K; Rth2 = 0.344 K/W

T7 / D7

IGBT (typ.)

Cth1 = 0.071 J/K; Rth1 = 1.211 K/W

Cth2 = 0.726 J/K; Rth2 = 0.293 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.043 J/K; Rth1 = 2.738 K/W

Cth2 = 0.54 J/K; Rth2 = 0.462 K/W

© 2001 IXYS All rights reserved

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