IRF220 데이터 시트보기 (PDF) - New Jersey Semiconductor
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IRF220 Datasheet PDF : 3 Pages
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Electrical Specifications Tc = 25°C. Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
CISS
COSS
VDS = 25V, VGS = OV, f=1MHz
(Figure 11)
- 450 -
PF
- 150 -
PF
CRSS
-
40
-
PF
LD Measured Between the Modified MOSFET
5.0
nH
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Device
Source and Gate Pins and Inductances
the Center of Die
Internal Source Inductance
LS Measured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
12.5
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RBJC
R6JA
Free Air Operation
-
- 3.12 °C/W
-
-
30 °C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
IRF220, IRF221
IRF222, IRF223
ISD Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Rectifier
_
-
5.0
A
-
-
4.0
A
Pulse Source to Drain Current (Note 3)
IRF220, IRF221
IRF222, IRF223
!SDM
b.
<s
. 20
A
-
-
16
A
Source to Drain Diode Voltage (Note 2)
IRF220, IRF221
VSD
Tc = 25°C, ISD= 5.0A, VGS = 0V, (Figure 13)
-
-
2.0
V
IRF222, IRF223
Tc = 25°C, ISD = 4.0A, VGS =ov. (Figure 13)
-
-
1.8
V
Reverse Recovery Time
Reverse Recovery Charge
trr
QRR
Tj = 150°C, ISD = 5.0A, dlSD/dt = 100A/us
Tj = 150°C, ISD = 5.0A, dlso/dt = 100A/US
- 350 -
ns
-
2.3
-
nc
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