DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
40
TA = 125°C
75°C
25°C
30
−25°C
VGS = 2.5 V
Pulsed
20
10
0
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 3.0 A
Pulsed
40
VGS = 2.5 V
30
4.0 V
4.5 V
20
10
0
-50
0
50
100
150
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
10
0.1
td(on)
VDD = 10.0 V
VGS = 4.0 V
RG = 10 Ω
1
10
ID - Drain Current - A
µ PA1870B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 3.0 A
Pulsed
40
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
5
ID = 6.0 A
4
VDD = 4.0 V
10.0 V
3
16.0 V
2
1
0
0
2
4
6
8
10
QG - Gate Charge - nC
Data Sheet G16741EJ1V0DS
5