BFR182T(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFR182T Datasheet PDF : 4 Pages
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BFR182T/BFR182TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D Low noise figure
D High power gain
1
1
94 9280
2
3
13 581
BFR182T Marking: RG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 652
23
13 570
BFR182TW Marking: WRG
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
15
V
10
V
2
V
35
mA
5
mA
200
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
RthJA
450
K/W
plated with 35mm Cu
Document Number 85025
Rev. 2, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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