BFR182TW 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFR182TW Datasheet PDF : 6 Pages
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Not for new design, this product will be obsoleted soon
BFR182T / BFR182TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• Low noise figure
• High power gain
e3
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Mechanical Data
Typ: BFR182T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: RG
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR182TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WRG
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
1
2
3
1
2
3
Electrostatic sensitive device.
Observe precautions for handling.
13581
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
VCBO
15
V
VCEO
10
V
VEBO
2
V
IC
35
mA
IB
5
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
RthJA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Document Number 85025
Rev. 1.4, 08-Sep-08
www.vishay.com
1
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