BFR182TW 데이터 시트보기 (PDF) - Inchange Semiconductor
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BFR182TW Datasheet PDF : 2 Pages
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isc Silicon NPN RF Transistor
DESCRIPTION
·Low Voltage Use
·Ultra Super Mini Mold Package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise and small signal amplifiers
from VHF band to UHF band
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
10
V
VEBO Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
TJ
Max.Junction Temperature
35
mA
200
mW
150
℃
Tstg
Storage Temperature Range
-65~150
℃
BFR182TW
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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