BFR182TW 데이터 시트보기 (PDF) - Inchange Semiconductor

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BFR182TW

Silicon NPN RF Transistor

Inchange Semiconductor 

isc Silicon NPN RF Transistor

BFR182TW

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

0.1 μA

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

1

μA

hFE

DC Current Gain

IC=5mA ; VCE= 6V

50

fT

Current-Gain—Bandwidth Product IC=5mA ; VCE= 3V ; f= 2GHz

8

8.5 GHz

Cre

Feed-Back Capacitance

IE= 0 ; VCB=10V;f= 1.0MHz

0.65 1

pF

︱S21e︱2 Insertion Power Gain

IC= 5mA ; VCE= 3V;f= 2.0GHz

5.5

dB

NF

Noise Figure

IC= 5mA ; VCE= 3V;f= 2.0GHz

2.0

dB

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

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