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150KR100A 데이터 시트보기 (PDF) - GeneSiC Semiconductor, Inc.

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150KR100A
GENESIC
GeneSiC Semiconductor, Inc. GENESIC
150KR100A Datasheet PDF : 3 Pages
1 2 3
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 200 V to 1000 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
150K(R)20A thru 150K(R)100A
VRRM = 200 V - 1000 V
IF = 150 A
DO-8 Package
AC
CA
Stud Stud
(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
I2t for fusing
Operating temperature
Storage temperature
VRRM
VDC
IF
IF,SM
I2t
Tj
Tstg
TC ≤ 110 °C
200
400
600
800
200
400
600
800
150
150
150
150
TC = 25 °C, tp = 8.3 ms 3740
3740
3740
3740
t = 8.3ms
58000
-55 to 150
-55 to 150
58000
-55 to 150
-55 to 150
58000
-55 to 150
-55 to 150
58000
-55 to 150
-55 to 150
1000
V
1000
V
150
A
3740
A
58000 A2sec
-55 to 150 °C
-55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
Diode forward voltage
Reverse current
VF
IF = 150 A, Tj = 25 °C
1.33
IR
VR = VRRM, Tj = 175 °C
35
1.33
35
1.33
35
1.33
32
1.33
V
24
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.25
0.25
0.25
0.25
0.25 °C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/150k20a.pdf
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