isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPP11N60S5
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤3mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11
IDM
Drain Current-Single Pulsed
22
PD
Total Dissipation @TC=25℃
125
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c) Channel-to-case thermal resistance
1
℃/W
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