SPP11N60S5 데이터 시트보기 (PDF) - Inchange Semiconductor

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SPP11N60S5

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

SPP11N60S5

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA

600

V

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID =500μA

3.5

5.5

V

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=7A

380 mΩ

IGSS

Gate-Source Leakage Current

VGS=20V;VDS=0V

IDSS

Drain-Source Leakage Current

VDS=600V; VGS= 0V

VSD

Diode forward voltage

IF=11A, VGS = 0 V

0.1

μA

25

μA

1.2

V

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.

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