BFQ67W 데이터 시트보기 (PDF) - NXP Semiconductors.
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BFQ67W Datasheet PDF : 12 Pages
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NXP Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67W
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: V2
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
open base
up to Ts = 118 C; note 1
IC = 15 mA; VCE = 5 V; Tj = 25 C
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 C
Ic = 15 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 C
Ic = 5 mA; VCE = 8 V; f = 1 GHz
MIN.
60
TYP.
100
8
13
1.3
MAX. UNIT
20 V
10 V
50 mA
300 mW
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 118 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
65
MAX.
20
10
2.5
50
300
150
175
UNIT
V
V
V
mA
mW
C
C
September 1995
2
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