MMBT2222ATT1 데이터 시트보기 (PDF) - Willas Electronic Corp.
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MMBT2222ATT1 Datasheet PDF : 3 Pages
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WILLAS
FM120-M+
MMBT2222ATTTH1RU
1.G0AeSUnReFArCaElMPOUuNTrpSCoHsOTeTKTY rBAaRnRIsERisRtEoCTrIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Package outline
NPN Silicon • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
T•heLsoew ptroawnesirsltoosrss, hairgeh edffeisciigennecdy. for general purpose amplifier
app•licHaitgihoncsu.rrTehnetycaapreabhioliutys,eldowinfothrweaSrOd Tvo−l5ta2g3epdarcokpa. ge which
is de•sHigignhedsufrogrelocawpapboiwliteyr. surface mount applications.
0.146(3.7)
0.130(3.3)
• Guardring for overvoltage protection.
Fea•tuUrletrsa high-speed switching.
• W•eSdieliccloanreetphiatat xthiael mplaatneariracl hoifpp, rmodeutacltsciolimcopnliajunnccetiwointh. RoHS requirements.
Pb•-LFereaed-pfraecekpaagretsismaeveatielanbvlieronmental standards of
Ro• HRMSoIHLp-SrSopTdrDuocd-t1ufc9ot5rf0op0rapc/2akc2ink8gingcocdoedesusufffixfix”G"G”"
HaloHgaelongefrneefreperopdroudcut cfot rfoprapcakcinkigngcocdodeessuufffifxix“"HH”"
Mechanical data
SOT-523
COLLECTOR
3
• EpoOxyR:DUELR9I4N-VG0INraFteOdRflMamATeIrOeNtardant
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
•DCeaviscee: MoldedMpalraisntgic, SOD-12S3hHipping
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
MMBT2222ATT1 Metho1dP2026 3000 / Tape & Ree l
• Polarity : Indicated by cathode band
MAX•IMMUoMunRtinAgTPINoGsiStio(nTA:
= 25°C)
Any
Rating
Symbol
Max
Unit
• Weight : Approximated 0.011 gram
2
Dimensions in inches and (millimeters)
EMITTER
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−BaMseAVXoIltMagUeM RATINGS AVNCDBOELECTR7I5CAL CHAVdRcACTERISTICS
MARKING DIAGRAM
RSiantgiEnlemgspithtaeatrs2−e5B℃ahsaelfawVmoablvtiaeegn, et6t0eHmzp,ererastiusrtieveunolfeisnsdVuoEcthBtieOvrewliosaeds.pec6ifi.e0d.
Vdc
For CcaoplleacctitoivreCluoraredn, td−erCatoenctiunruroeunst by 20% IC
600
mAdc
1P M G
THERMAL CHARRAACTTINEGRSISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MGH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code Characteristic
MaxiTmoutmal RDeecvuicrreenDtisPseiapkatRioenve(NrsoeteVo1lt)age
MaximuTmA R=M25S°VColtage
MaxiTmhuemrmDaCl BRleosciksintagnVceol,tage
MaximuJmunAcvtieorna−gteoF−oArmwabriednRtectified Current
Symbol
PD VRRM
VRMS
RqJA
VDC
IO
Max12
15020
14
83320
U1n3it
14
m30W
40
21
28
°C30/W 40
15
16 1 18
10
115
50
60
80
100
150
35
1P42 = Sp5e6cific Dev7i0ce Code 105
50 M60 = D8a0te Code 100
150
G 1.0 = Pb−Free Package
120
200 Volts
140 Volts
200 Volts
Amp
PeakOFpoTreewrmaartpdineSgruaartgunerdeCSRutroarernangtge8e.3Jmunscstiinognle half sineT-wJ,aTvestg
−55 to +150
IFSM
°C
30
Amp
superimposed on rated load (JEDEC method)
TypEicLaEl TChTerRmIaCl AReLsiCstHanAceR(ANCotTe E2)RISTICS
Typical Junction Capacitance (Note 1)
(TA
=
25°RCΘuJnAless
CJ
otherwise
noted)
Operating Temperature Range
Characteristic TJ
-55 to +125
StoOraFgFe CTeHmApReAraCtuTreERaISnTgeICS
TSTG
Symbol
40
120
Min
- 65 to +175
-5M5 atox+150 Unit
℃/W
PF
℃
℃
Collector −Emitter Breakdown Voltage (Note 1)
V(BR)CEO
40
−
Vdc
(IC = 1.0 mAdCcH,AIBRA=C0T)ERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
Collector −Base Breakdown Voltage
Maxim(uImC =Av1e0ramgAedRce, vIEer=se0C) urrent at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
V(BR)CBO
0.5 75
10
0.85
−
0.9
Vdc
0.92 Volts
mAm
Emitter −Base Breakdown Voltage
V(BR)EBO
6.0
−
Vdc
NOTES(:IE = 10 mAdc, IC = 0)
1- MeBaassueredCautto1fMf CHuZrarenndtapplied reverse voltage of 4.0 VDC.
2- Therm(VaCl REe=si6st0anVcdecF,roVmEBJu=nc3t.io0nVtodcA)mbient
IBL
−
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
−
100
nAdc
2012-11
WILLAS ELECTRONIC CORP.
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