C2517 데이터 시트보기 (PDF) - New Jersey Semiconductor
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C2517 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC2517
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 50mA; IB= 0 '
VcE(sat) Collector-Emitter Saturation Voltage lc= 3.0A; IB= 0.3A
VBE(sal) Base-Emitter Saturation Voltage
lc= 3.0A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB=100V; IE=0
ICER
ICEX
IEBO
hpE-1
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCE= 100V; RBE= 51Q , Ta=125JC
VCE= 100V;VBE(0ffr-1.5V
VCE= 100V; VBE(off)= -1.5V, Ta=125C
VEB=10V; lc=0
lc=0.2A;VCE=5V-'
hpE-2
DC Current Gain
lc= 2A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=3.0A,RL=17n,
IB1= -IB2= 0.3A,VCc:« 50V
MIN MAX UNIT
100
V
0.6
V
1.5
V
10
UA
1.0
mA
10
uA
1.0
mA
10
uA
40
40
200
0.5
(J S
2.5
us
0.5
(J S
hFE.2 Classifications
M
L
K
40-80
60-120 100-200
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