2SB688 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SB688

Silicon PNP transistor in a TO-3P Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB688

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC(TC=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

-120

-120

-5

-10

-1

80

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

符号

Symbol

VCEO

ICBO

IEBO

hFE

VCE(sat)

VBE

fT

Cob

测试条件

Test Conditions

最小值 典型值 最大值 单位

Min Typ Max Unit

IC=-50mA IB=0

-120

V

VCB=-120V IE=0

VEB=-5.0V IC=0

VCE=-5.0V IC=-1.0A 55

-10 μA

-10 μA

160

IC=-5.0A IB=-0.5A

-2.5 V

VCE=-5.0V

VCE=-5.0V

f=1.0MHz

VCB=-10V

f=1.0MHz

IC=-5.0A

IC=-1.0A

IE=0

-1.5 V

10

MHz

280

pF

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