B688 데이터 시트보기 (PDF) - Unisonic Technologies

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B688

SILICON PNP TRANSISTORS

Unisonic Technologies 

2SB688

PNP SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25C ,unless otherwise specified)

PARAMETERS

SYMBOL

RATINGS

UNITS

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-120

V

Emitter Base Voltage

VEBO

-5

V

Collector Current

IC

-10

A

Base Current

IB

-1

A

Collector Power Dissipation (TC=25C)

PC

80

W

Max. Operating Junction Temperature

TJ

+150

C

Storage Temperature

TSTG

-40 ~ +200

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown

Voltage

DC Current Gain

Collector-Emitter Saturation

Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

VBE

fT

Cob

 CLASSIFICATION OF hFE

TEST CONDITIONS

VCB = -120V, IE = 0

VEB = -5V, IC = 0

IC = -50mA, IB= 0

VCE = -5V, IC = -1A

IC = -5A, IB = -0.5A

VCE = -5A, IC= -5A

VCE = -5A, IC= -1A

VCB = -10V, IE = 0, f=1MHz

MIN TYP MAX UNIT

-10 µA

-10 µA

-120

V

55

160

-2.5 V

-1.5 V

10

MHz

280

pF

RANK

RANGE

R

55 ~ 110

O

80 ~ 160

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R214-007.B

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