2SB688 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB688

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2SB688

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A

-2.5

V

VBE(on)

Base-Emitter On Voltage

IC= -5A ; VCE= -5V

-1.5

V

ICBO

Collector Cutoff Current

VCB= -120V ; IE= 0

-10 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10 μA

hFE

DC Current Gain

IC= -1A ; VCE= -5V

55

160

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1.0MHz

280

pF

fT

Current-Gain—Bandwidth Product

IC=-1A ; VCE= -5V

10

MHz

 hFE Classifications

R

O

55-110 80-160

SPTECH website：www.superic-tech.com

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