PSMN004-36B 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
PSMN004-36B Datasheet PDF : 14 Pages
| |||
NXP Semiconductors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
80
ID
(A)
60
40
10 V 5 V 2.8 V
03ag45
2.6 V
Tj = 25 °C
2.4 V
80
ID
(A)
VDS > ID × RDS(on)
60
40
03ag47
20
0
0
2.2 V
VGS = 2 V
0.2
0.4
0.6
0.8
1
VDS (V)
20
0
−0.2
175 °C
Tj = 25 °C
0.6
1.4
2.2
3
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10-1
ID
(A)
10-2
03aa36
2.5
VGS(th)
(V)
2
max
03aa33
10-3
min
typ
max
10-4
1.5
typ
1
min
10-5
0.5
10-6
0
1
2
3
VGS (V)
0
-60
0
60
120
180
Tj (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN004-36B_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
Share Link: 