PSMN004-60B 데이터 시트보기 (PDF) - NXP Semiconductors.
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PSMN004-60B Datasheet PDF : 13 Pages
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NXP Semiconductors
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
300
ID
Tj = 25 °C 7.5 V
8V
(A)
10 V
200
20V
03ah82
7V
6.5 V
6V
100
00
5.5 V
5V
VGS = 4.5 V
0.4
0.8
1.2
1.6VDS(V) 2
100
ID
(A)
80
VDS > ID x RDSon
03ah84
60
Tj = 175 °C
40
20
25 °C
00
1
2
3
4
5
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10−1
ID
(A)
10−2
03aa35
min typ max
5
VGS(th)
(V)
4
max
03aa32
10−3
3
typ
10−4
2
min
10−5
1
10−6
0
2
4
6
VGS (V)
0
−60
0
60
120
180
Tj (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN004-60B_2
Product data sheet
Rev. 02 — 15 December 2009
© NXP B.V. 2009. All rights reserved.
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