PSMN005-30K 데이터 시트보기 (PDF) - NXP Semiconductors.
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PSMN005-30K Datasheet PDF : 12 Pages
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NXP Semiconductors
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
gfs
transfer conductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 13 A; Tj = 25 °C;
see Figure 10 and 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 10 and 11
ID = 20 A; VDS = 15 V; VGS = 4.5 V;
Tj = 25 °C; see Figure 12
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
VDS = 15 V; RL = 15 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
VDS = 15 V; ID = 20 A; Tj = 25 °C
IS = 15 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
30
-
-
V
0.5 -
-
V
-
-
3.4 V
1
-
3
V
-
-
1
µA
-
-
0.5 mA
-
-
100 nA
-
-
100 nA
-
6.6 8
mΩ
-
4.4 5.5 mΩ
-
34
-
nC
-
15
-
nC
-
14
-
nC
-
3100 -
pF
-
605 -
pF
-
405 -
pF
-
18
-
ns
-
16
-
ns
-
65
-
ns
-
45
-
ns
-
60
-
S
-
0.81 1.3 V
-
35
-
ns
-
20
-
nC
PSMN005-30K_1
Product data sheet
Rev. 01 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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