SIHF9520STL-E3 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHF9520STL-E3

Power MOSFET

Vishay Semiconductors 

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

25

91075_09

50

75 100 125 150 175

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRF9520S, SiHF9520S

Vishay Siliconix

VDS

VGS

Rg

RD

D.U.T.

- 10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

-

+VDD

Fig. 10a - Switching Time Test Circuit

VGS

10 %

td(on) tr

td(off) tf

90 %

VDS

Fig. 10b - Switching Time Waveforms

10

D = 0.5

1

0.2

0.1

0.05

0.1 0.02

0.01

10-2

10-5

91075_11

Single Pulse

(Thermal Response)

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

PDM

t1

t2

Notes:

1. Duty Factor, D = t1/t2

2. Peak Tj = PDM x ZthJC + TC

1

10

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91075

S11-1050-Rev. C, 30-May-11

www.vishay.com

5

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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