STB6NK60ZT4 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STB6NK60ZT4

N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 1 mA, VGS = 0

600

Breakdown Voltage

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

50

IGSS

Gate-body Leakage

VGS = ± 20V

±10

Current (VDS = 0)

VGS(th) Gate Threshold Voltage

VDS = VGS, ID = 100µA

3

3.75

4.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 3 A

1

1.2

DYNAMIC

Symbol

Parameter

gfs (1) Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Coss eq. (3) Equivalent Output

Capacitance

SWITCHING ON

Symbol

Parameter

td(on)

tr

Turn-on Delay Time

Rise Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Test Conditions

VDS = 8 V, ID = 3 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

VGS = 0V, VDS = 0V to 480V

Test Conditions

VDD = 300 V, ID = 3 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 480V, ID = 6 A,

VGS = 10V

Min.

Typ.

5

905

115

25

56

Typ.

14

14

33

6

17

Max.

Max.

46

SWITCHING OFF

Symbol

Parameter

td(off)

tf

Turn-off Delay Time

Fall Time

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

Test Conditions

VDD = 300 V, ID = 3 A

RG = 4.7Ω VGS = 10 V

(Resistive Load see, Figure 3)

VDD = 480V, ID = 6 A,

RG = 4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

Min.

Typ.

47

19

16

16

29

Max.

Unit

V

µA

µA

µA

V

Ω

Unit

S

pF

pF

pF

pF

Unit

ns

ns

nC

nC

nC

Unit

ns

ns

ns

ns

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

6

A

24

A

VSD (1) Forward On Voltage

ISD = 6 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 6 A, di/dt = 100A/µs

VDD = 50 V, Tj = 150°C

(see test circuit, Figure 5)

445

ns

2.7

µC

12

A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

3/13

Share Link: