STB7NK80ZT4 데이터 시트보기 (PDF) - STMicroelectronics

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STB7NK80ZT4

N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

TO-220 / D²PAK

I²PAK

TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt (3) Peak diode recovery voltage slope

5.2

3.3

20.8

125

1

800

± 30

4000

4.5

5.2 (1)

3.3 (1)

20.8(1)

30

0.24

Insulation withstand voltage (RMS) from all

VISO three leads to external heat sink

--

(t=1s; Tc= 25°C)

2500

Tj

Max operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤5.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

-55 to 150

Unit

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering

purpose

Value

TO-220/D2PAK

I2PAK

TO-220FP

1

4.2

62.5

300

Unit

°C/W

°C/W

°C

3/18

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