1N60AL-A-T92-K 데이터 시트보기 (PDF) - Unisonic Technologies
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1N60AL-A-T92-K Datasheet PDF : 8 Pages
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1N60A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
1N60A-A
1N60A-B
VDSS
600
V
650
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulse(Note 3)
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
VGSS
ID
IDM
EAS
EAR
dv/dt
±30
0.5
2
50
3.6
4.0
4.5
V
A
A
mJ
mJ
V/ns
Power Dissipation (TC=25°C)
Derate above 25°C
3
W
PD
25
mW/°C
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
MIN
TYP
θJA
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
MAX
120
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
1N60A-A
Drain-Source Breakdown Voltage
1N60A-B
BVDSS
VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ID = 250μA
referenced
to
25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD (OFF)
VDD=300V, ID=0.5A, RG=5Ω
(Note 1,2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=480V, VGS=10V, ID=0.8A
(Note 1,2)
QGD
MIN TYP MAX UNIT
600
V
650
V
10 μA
100 nA
-100 nA
0.4
V/°C
2.0
4.2 V
11 15 Ω
100 pF
20 pF
3 pF
12 34 ns
11 32 ns
40 90 ns
18 46 ns
8 10 nC
1.8
nC
4.0
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-091,E
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