2SD1486P 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD1486P

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 2.0V(Max)@IC= 4A

·Wide Area of Safe Operation

·Complement to Type 2SB1055

APPLICATIONS

·Designed for high power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

10

A

3

W

70

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

2SD1486

1

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