2SC3182 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC3182 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SC3182
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.) @lc= 7A
• Good Linearity of hFE
• Complement to Type 2SA1265
APPLICATIONS
• Power amplifier applications
• Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO Collector-Emitter Voltage
140
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
Tc-25 C
Tj
Junction Temperature
1
A
100
W
150
"C
Tstg
Storage Temperature Range
-55-150
"C
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PIN 1.BASE
2. COLLECTOR
3.B/1ITTER
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DfM MIN MAX
A 19.90 20.10
B 15,50 15.70
i; 4.40 4.&0
D 0.90 1.10
F 3.20 3.40
H 2.90 3.10
J 0.50 0.70
K 13.90 20.10
L 1.90 2.10
N 10.80 11.00
C! 4.40 4.60
R 3.30 3,35
S 1.40 1.60
T 1.00 1.20
U 2.10 2,30
Z 8.90 9.10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished hy N.I Semi-Conductors is believed to he holh accurate and reliable at the time of eoinu
to press. llo\\e\er. N.I Seini-CondiicUirs assumes no responsibility lor ;m> errors or omissions discovered in its use.
N.I Semi-( onductors eneimrafies customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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