BUX41N 데이터 시트보기 (PDF) - Inchange Semiconductor
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BUX41N Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX41N
DESCRIPTION
· Collector-Emitter Voltage-
: VCEO= 160V(Min)
·High Current Capability
·Good Linearity of hFE
APPLICATIONS
·Designed for high speed, high current, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
220
V
VCEO Collector-Emitter Voltage
160
V
VCEX Collector-Emitter Voltage VBE= -1.5V
220
V
VCER Collector-Emitter Voltage RBE= 100Ω
200
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
18
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=100℃
TJ
Junction Temperature
3.6
A
120
W
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W
isc website：www.iscsemi.cn
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