2SD1088 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1088 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
2SD1088
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
ICBO
Collector Cutoff Current
VCE= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 2V
hFE-2
DC Current Gain
IC= 4A; VCE= 2V
Switching Times
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 4A; IB1= IB2= 40mA;
RL= 25Ω,VCC =100V
MIN TYP. MAX UNIT
250
V
2.0
V
2.5
V
500 μA
500 μA
2000
200
1.0
μs
8.0
μs
5.0
μs
SPTECH website：www.superic-tech.com
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