A748 데이터 시트보기 (PDF) - New Jersey Semiconductor
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A748 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA;lB=0
V(BR)CBO Collector-Base Breakdown Voltage
lc=-1mA; IE=0
VcE(sat) Collector-Emitter Saturation Voltage lc=-1A; IB=-0.1A
vBE(sat) Base-Emitter Saturation Voltage
IG= -2A; IB- -0.2A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
ICEO
Collector Cutoff Current
VCE= -20V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-0.1A;VCE=-5V
hFE-2
DC Current Gain
lc= -1A; VCE= -5V
fr
Current-Gain—Bandwidth Product
lc= -500mA; VCE= -5V
hFE.2 Classifications
p
Q
R
50-100 80-160 120-220
2SA748
MIN TYP. MAX UNIT
-50
V
-70
V
-1.0
V
-1.5
V
-1.0 u A
-100 u A
-100 M A
30
50
220
120
MHz
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