D2328 데이터 시트보기 (PDF) - Inchange Semiconductor

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D2328

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD2328

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 180V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A

·High Power Dissipation

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

180

V

VCEO

Collector-Emitter Voltage

180

V

VEBO

Emitter-Base voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1.5

A

150

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website： www.iscsemi.com

1 isc & iscsemi is registered trademark

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