2SD1656 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD1656

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC=1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

tf

Fall Time

IC= 5A, IB1= 1A; IB2= 2A

2SD1656

MIN TYP. MAX UNIT

800

V

1500

V

7

V

5.0

V

1.5

V

10 μA

1.0 mA

8

0.4 μs

SPTECH website：www.superic-tech.com

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