2SC3311A 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SC3311A

TO-92S Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

JC(T

TO-92S Plastic-Encapsulate Transistors

2SC3311A TRANSISTOR (NPN)

FEATURES

z Optimum for High-density Mounting

z Allowing Supply with the Radial Taping

z Complementary to 2SA1309A

TO – 92S

1. EMITTER

2. COLLECTOR

3. BASE

12 3

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

60

50

7

0.1

300

417

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC= 0.01mA,IE=0

60

V

V(BR)CEO IC=2mA,IB=0

50

V

V(BR)EBO IE=0.01mA,IC=0

7

V

ICBO

VCB=10V,IE=0

0.1

μA

ICEO

VCE=10V,IB=0

1

μA

IEBO

VEB=7V,IC=0

0.1

μA

hFE

VCE=10V, IC=2mA

160

460

VCE(sat) IC=100mA,IB=10mA

0.3

V

Cob

VCB=10V,IE=0, f=1MHz

3.5

pF

fT

VCE=10V,IC=2mA, f=200MHz

150

MHz

CLASSIFICATION OF hFE

RANK

RANGE

Q

160-260

R

210-340

S

290-460

www.cj-elec.com

1

DA,Juln,2,2001164

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