2N7002KA 데이터 시트보기 (PDF) - KEC
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2N7002KA Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
·ESD Protected 2000V.
·High density cell design for low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capablity.
·Suffix U : Qualified to AEC-Q101.
ex) 2N7002KA-RTK/HU.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed (Note 1)
Drain Power Dissipation
(Note 2)
Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
60
±20
300
1200
350
150
-55～150
Thermal Resistance, Junction-to-
Ambient
(Note2)
Rth(j-a)
357
Note 1) Pulse Width≤10㎲, Duty Cycle≤1%
Note 2) Package mounted on 99% Alumina 10×8×0.6mm
UNIT
V
V
mA
mW
℃
℃
℃/W
EQUIVALENT CIRCUIT
D
G
2N7002KA
N Channel MOSFET
ESD Protected 2000V
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
Q
K
0.00 ~ 0.10
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
Marking
Type Name
2P
Lot No.
S
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
BVDSS
IDSS
IGSSF
IGSSR
VGS=0V, ID=10μA
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
ESD-Capability*
C=100pF, R=1.5KΩ
-
Both forward and reverse
direction 3 pulse
*Failure criterion : IDSS > 1μA at VDS=60V, IGSSF>10μA at VGS=20V, IGSSR>-10μA at VGS=-20V.
2018. 03. 29
Revision No :5
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
10
-10
UNIT
V
μA
μA
μA
2000
-
-
V
1/3
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