2N7002K 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD

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2N7002K

N-Channel Enhancement Mode MOSFET

Kodenshi Auk Co., LTD 

Electrical Characteristics (Tamb=25℃, Unless otherwise specified)

Characteristic

Symbol

Test Condition

Drian-Source breakdown voltage

Gate-Source breakdown voltage

Gate-Threshold voltage

BVDSS

BVGSS

VGS(th)

ID=250A, VGS=0

IG=250A, VDS=0

ID=250uA, VDS=VGS

Zero Gate voltage drain current

IDSS

VDS=60V, VGS=0

Gate-body leakage

Drain-Source on-resistance (Note 3)

Forward trans-conductance (Note 3)

IGSS

RDS(ON)

gfs

VGS=5V, VDS=0V

VGS=10V, VDS=0V

VGS=20V, VDS=0V

VGS=10V, ID=0.5A

VGS=5V, ID=0.05A

VDS=10V, ID=0.2A

Input capacitance

Output capacitance

Reverse Transfer capacitance

Turn-on delay time (Note 3, 4)

Rise time (Note 3, 4)

Turn-off delay time (Note 3, 4)

Fall time (Note 3, 4)

Total gate charge (Note 3, 4)

Gate-Source charge (Note 3, 4)

Gate-Drain charge (Note 3, 4)

Diode forward voltage (Note 3)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

VDS=25V, VGS=0,

f=1MHz

VDD=30V, ID=0.2A,

VGS=10V, RG=10

VDS=10V, ID=0.25A,

VGS=4.5V

VGS=0V, IS=0.2A

Note 3) Pulse test: Pulse width≤300us, Duty cycle≤2%

Note 4) Essentially independent of operating temperature typical characteristics.

2N7002K

Min. Typ. Max. Unit

60

-

-

V

±20

-

-

V

1

-

2.5

V

-

-

1

A

-

- 100 nA

150 nA

10 A

-

-

3



-

-

3.5

0.08 -

-

S

-

30 50

-

7

-

pF

-

4

-

-

2

-

-

15

-

ns

--

8

-

-

11

-

-

0.6 0.8

-

0.2

-

nC

-

0.2

-

-

-

1.3

V

Rev. date: 24-AUG-11

KSD-T5C097-000

www.auk.co.kr

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