C3310 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3310 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
7
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
1
A
30
W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3310
SPTECH website：www.superic-tech.com
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