D1632 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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D1632

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2SD1632

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

hFE

DC Current Gain

IC= 3A; IB= 1A

VCB= 750V; IE= 0

VCB= 1300V; IE= 0

IC= 3A; VCE= 10V

VECF

C-E Diode Forward Voltage

IF= 4A

Switching times

tstg

Storage Time

tf

Fall Time

IC= 3A; IB(end)= 1A; Lleak= 5μH

MIN TYP. MAX UNIT

5

V

1.0

V

1.5

V

50 μA

1.0 mA

5

15

2.2

V

9.0 μs

0.8 μs

SPTECH website：www.superic-tech.com

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