BUL38D 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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BUL38D Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.75A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; IB= 0.4A
VCE= 800V; VBE= 0
VCE= 800V; VBE= 0, TC= 125℃
VCE= 450V; IB= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-3
DC Current Gain
IC= 2A; VCE= 5V
VF
Diode Forward Voltage
IF= 2A
Switching Times, Resistive Load
ts
Storage Time
tf
Fall Time
IC= 2.5A; IB1= -IB2= 0.5A;
VCC= 150V; tp= 30μs
hFE-3 Classifications
A
B
13-23 22-32
BUL38D
MIN TYP. MAX UNIT
450
V
9
V
0.5
V
0.7
V
1.1
V
1.1
V
1.2
V
0.1
0.5
mA
0.25 mA
10
60
13
32
1.5
V
2.2 μs
0.8 μs
SPTECH website：www.superic-tech.com
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