C3152 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3152 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 1.5A; IB= 0.3A
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 2A;IB1= 0.4A; IB2= -0.8A;
RL= 20Ω; VCC= 400V
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
2SC3152
MIN TYP. MAX UNIT
800
V
900
V
7
V
2.0
V
1.5
V
10
μA
10
μA
10
40
8
15
MHz
60
pF
1.0 μs
3.0 μs
0.7 μs
SPTECH website：www.superic-tech.com
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