2SD726 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD726 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPNPower Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 0.1A; VCE= 5V
COB
Collector Output Capacitance
IE= 0; VCB= 20V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
hFE-1 Classifications
B
C
60-120 100-200
2SD726
MIN TYP. MAX UNIT
80
V
5
V
2.0
V
1.5
V
0.1 mA
60
200
35
40
pF
10
MHz
SPTECH website：www.superic-tech.com
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