SPTECH Product Specification
SPTECH Silicon PNP Darlington Power Transistor 2SB1587
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -6A; VCE=- 4V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -1A; VCE= -12V
MIN TYP. MAX UNIT
-150
V
-2.5 V
-3.0 V
-100 μA
-100 μA
5000
85
pF
65
MHz
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
SPTECH website:www.superic-tech.com
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