2SC3830 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SC3830 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3830
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A ;IB1=0.2A; IB2= -0.4A
RL= 100Ω; VCC= 200V
MIN TYP. MAX UNIT
500
V
0.5
V
1.3
V
1
mA
100 μA
10
30
8
MHz
45
pF
1.0 μs
4.5 μs
0.5 μs
SPTECH website：www.superic-tech.com
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