2SC3833 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC3833 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SC3833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1.4A
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 7A ; VCE= 4V
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -1A ; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 7A,IB1= 0.7A; IB2= -1.4A
RL= 28.5Ω; VCC= 200V
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
0.1 mA
0.1 mA
10
30
105
pF
10
MHz
1.0 μs
3.0 μs
0.5 μs
SPTECH website：www.superic-tech.com
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